Optical gain properties of quantum dot arrays fabricated by the edge-defined nanowires

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM) Pub Date : 2010-02-25 DOI:10.1109/PHOTWTM.2010.5421927

J. Yi

引用次数: 0

Abstract

The optical gain properties of the quantum dot arrays fabricated by the edge-defined nanowires have been investigated to quantitatively assess the modulation bandwidth for various minibandgap of the quantum dot arrays on GaN wurtzite substrate.

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边缘纳米线制备量子点阵列的光学增益特性

研究了边缘定义纳米线制备的量子点阵列的光学增益特性，定量地评估了GaN纤锌矿衬底上量子点阵列不同微带隙的调制带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)

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