The Analysis of Power RF GaN Transistors Thermal Parameters in Pulse Mode

Abstract

The achievements in GaN HEMT technologies allow manufacturing transistors with output power up to 1000W in pulse mode. Self-heating in the transistor channel is a limiting factor for device reliability. The ordinary value for transistor channel temperature is up to 200C. It’s important to know the transistor thermal mode to predict device capabilities. The device under test in this work is an RF GaN transistor on silicon substrate with 2.1mm overall device width. This paper contains the results of the research of high-power RF GaN transistors thermal phenomena in pulse mode.