High temperature simulation of 6H- and 4H-silicon carbide MOSFETs

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' Pub Date : 1998-04-24 DOI:10.1109/SECON.1998.673347

S. F. Shams, K. Sundaram, L. Chow

引用次数: 1

Abstract

Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.

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6H-和4h -碳化硅mosfet的高温模拟

利用ISE-TCAD器件模拟器对垂直功率DMOSFET进行了仿真。本次模拟采用了6H和4H SiC晶体的最新参数。研究了具有不同沟道长度的垂直DMOSFET在两种不同温度下的工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings IEEE Southeastcon '98 'Engineering for a New Era'

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