A class-AB flipped voltage follower output stage

F. Centurelli, P. Monsurrò, A. Trifiletti
{"title":"A class-AB flipped voltage follower output stage","authors":"F. Centurelli, P. Monsurrò, A. Trifiletti","doi":"10.1109/ECCTD.2011.6043851","DOIUrl":null,"url":null,"abstract":"In this paper we present a novel topology of a class-AB flipped voltage follower (FVF) output stage. This stage has better slew-rate performance than the standard FVF buffer, and better linearity and output resistance than the standard class-AB stage. Besides, it achieves higher output voltage swing than other class-AB FVF buffers previously presented in the literature. It is thus suitable for low-voltage low-power stages requiring low bias currents but driving large capacitive loads with large signal swing. These buffers have been compared using 65nm CMOS technology models provided by STMicroelectronics. The buffer consumes 10µA from a 1.2V supply, and has a bandwidth of 100MHz with a 2pF load. It has −50dB HD2 and −60dB HD3 when the input is a 0.5VPP sinusoid at 1MHz, and the 1% settling time to a 0.5VPP square wave is about 20ns.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

Abstract

In this paper we present a novel topology of a class-AB flipped voltage follower (FVF) output stage. This stage has better slew-rate performance than the standard FVF buffer, and better linearity and output resistance than the standard class-AB stage. Besides, it achieves higher output voltage swing than other class-AB FVF buffers previously presented in the literature. It is thus suitable for low-voltage low-power stages requiring low bias currents but driving large capacitive loads with large signal swing. These buffers have been compared using 65nm CMOS technology models provided by STMicroelectronics. The buffer consumes 10µA from a 1.2V supply, and has a bandwidth of 100MHz with a 2pF load. It has −50dB HD2 and −60dB HD3 when the input is a 0.5VPP sinusoid at 1MHz, and the 1% settling time to a 0.5VPP square wave is about 20ns.
A类翻转电压跟随器输出级
本文提出了一种新颖的ab类翻转电压从动器(FVF)输出级拓扑。该级比标准FVF缓冲器具有更好的自旋速率性能,比标准ab级具有更好的线性度和输出电阻。此外,它比以往文献中提出的其他ab类FVF缓冲器实现更高的输出电压摆幅。因此,它适用于需要低偏置电流但驱动具有大信号摆幅的大容性负载的低压低功率级。这些缓冲器使用意法半导体提供的65nm CMOS技术模型进行了比较。该缓冲器从1.2V电源中消耗10µA,在2pF负载下具有100MHz的带宽。当输入为0.5VPP正弦波时,其HD2和HD3分别为- 50dB和- 60dB, 0.5VPP方波1%的沉降时间约为20ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信