Next-generation MVDC architecture based on 6.5 kV / 200 A, 12.5 mΩ SiC H-bridge and 10 kV / 240 A, 20 mΩ SiC dual power modules

Abstract

The Navy's Next Generation Integrated Power System (NGIPS) Technology Development Roadmap establishes Medium Voltage DC (MVDC) Integrated Power System (IPS) technology in future warships. This requires a higher medium voltage (MV)-rated power device, a semiconductor technology that enables compactness and light weight, and easily integrated into modular proven power conversion architectures. This envisioned system takes the generated 4.16–13.8 kV, 60 Hz, AC power and rectifies it to MVDC. The rectified MVDC is then isolated before being distributed throughout the ship where it is converted at diverse AC and DC loads. This can be accomplished using silicon carbide (SiC)-based power conversion topologies switching at >20 kHz, thereby eliminating heavy and bulky isolation transformers onboard and improving the IPS power density to that expected from next-generation warships. This paper presents a new approach for an IPS, based on a Common Power Electronics Building Block (CPEBB), using both 6.5 kV / 200 A SiC H-bridge in an optimized industry-standard XHP™ 3 package and a 10 kV / 240 A SiC dual in an optimized custom package. This architecture, with power dense MV converters/inverters, is enabled by the higher blocking voltage and higher switching frequency of the SiC technology. The proposed Multi-Secondary Solid-State Transformer (MSSST) is the fundamental building block which enables this high performance MVDC IPS.