Thermal Performance Analysis of a Silicon Chip (IC) Mounted on Printed Circuit Board for Different Substrate Materials Based on the Convection Heat Transfer by 3D Finite Element Method

H. A. Prince, M. Rahman, E. H. Rozin, Shailee Mitra
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引用次数: 2

Abstract

A silicon chip (IC) is made of billions of transistors having non negligible electrical resistance and dissipates heat to surrounding based on its running speed (clock speed). Natural cooling is not sufficient enough to keep the temperature of the chip at safe limit. In this present model we investigated temperature field of a silicon chip volume (dissipating heat to surrounding at a particular rate) mounted on PCB for various substrate materials (FR4, PTFE, Polyimide and Silicon-nitride) based on convective heat transfer coefficient (a coefficient which depends on the external cooling fluid and PCB) with appropriate boundary conditions. 3D conduction equation, Newton’s law of cooling, Stephen-Boltzmann equation have been used for this investigation. Finite element method (FEM) is used to solve the governing equations. Both steady state and transient analysis (up to 10 min) have been done. The results of the investigation have been shown by 3D temperature distribution throughout the silicon chip volume for various substrate materials. Effect of convective heat transfer coefficient on maximum temperature on chip volume for different substrate materials have also been presented. It has been seen that substrate materials (FR-4, PTFE, Polyimide and Silicon-nitride) have a negligible effect on thermal performance of silicon chip. But FR-4 substrate shows best performance compared to other substrate since it induce less maximum temperature on silicon chip volume which will results in less thermal stress on silicon chip. It has also been seen that as convective heat transfer coefficient increases maximum temperature on silicon chip domain decreases gradually. So to attain best cooling performance we have to increase the convective heat transfer coefficient which can be done via several process like using nanofluid and some other highly efficient CPU cooler.
基于对流换热的三维有限元法分析不同衬底材料下印刷电路板上硅片的热性能
硅芯片(IC)由数十亿个具有不可忽略的电阻的晶体管组成,并根据其运行速度(时钟速度)向周围散发热量。自然冷却不足以使芯片的温度保持在安全限度内。在本模型中,我们基于对流传热系数(该系数取决于外部冷却流体和PCB)在适当的边界条件下研究了安装在PCB上的各种衬底材料(FR4, PTFE,聚酰亚胺和氮化硅)的硅芯片体积(以特定速率向周围散热)的温度场。采用了三维传导方程、牛顿冷却定律、斯蒂芬-玻尔兹曼方程。采用有限元法求解控制方程。稳态和瞬态分析(长达10分钟)已经完成。研究结果已通过不同衬底材料在整个硅片体积内的三维温度分布得到证明。本文还讨论了不同衬底材料的对流换热系数对最高温度对芯片体积的影响。研究表明,衬底材料(FR-4、PTFE、聚酰亚胺和氮化硅)对硅片热性能的影响可以忽略不计。而FR-4衬底在硅片上产生的最高温度更小,导致硅片上的热应力更小,因此与其他衬底相比表现出最好的性能。随着对流换热系数的增大,硅片上的最高温度逐渐降低。因此,为了获得最佳的冷却性能,我们必须增加对流换热系数,这可以通过使用纳米流体和其他一些高效的CPU冷却器来实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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