Growth of porous InP: Transition from three to two dimensional structures

Z. Weng, An'gang Yuan, Weixun Mi, Wendan Zhang, Cuiting Wu, Zuobin Wang
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引用次数: 3

Abstract

We present the transition state of porous InP from three to two dimensions, which is explored during electrochemical etching at constant current density in NaCl solutions on n-InP(100) wafers. The `node' of the three dimensional structure revealed by scanning electron microscopy are consistent with the oscillatory periods, and that the smooth curve is corresponding to the uniformly vertical pores along with the <;001> direction. In addition, the onset and end of the oscillations shift ahead of times with increasing current densities. Furthermore, the transition of porous InP was discussed based on the surface curvature, the diffusion-control, and the reactive heat.
多孔InP的生长:从三维结构到二维结构的转变
本文研究了多孔InP在NaCl溶液中恒流密度的电化学刻蚀过程中从三维到二维的过渡状态。扫描电镜显示的三维结构“节点”与振荡周期一致,光滑曲线对应的是沿方向均匀垂直的孔隙。此外,随着电流密度的增加,振荡的开始和结束时间提前。在此基础上,从表面曲率、扩散控制和反应热三个方面讨论了多孔InP的相变过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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