Magnetization Relaxation in Sputtered Thin Fe Films; A FMR study

Abstract

In this paper, the authors studied the ferromagnetic resonance (FMR) linewidth of thin Fe films in NM/Fe/NM structures (NM[30 Aring]=Al, Cu, Ti and Ta) to investigate the relaxation mechanism. Polycrystalline Fe films, with thicknesses of 20 to 300 Aring in steps of 20 Aring were grown by sputtering on GaAs(100) substrates. The experimental results and their interpretation agreed with the microscopic theories taking into account spin-current generated by the precession of magnetization in NM/Fe/NM films.