InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

2009 IEEE LEOS Annual Meeting Conference Proceedings Pub Date : 2009-12-01 DOI:10.1109/LEOS.2009.5343085

P. Binetti, X. Leijtens, A. Morant Ripoll, T. de Vries, E. Smalbrugge, Y. Oei, L. Di Cioccio, J. Fédéli, C. Lagahe, R. Orobtchouk, D. van Thourhout, P. J. van Veldhoven, R. Notzel, M. Smit

引用次数: 8

Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.

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基于inp的光电探测器与Si3N4互连波导结合在CMOS上

我们开发了一种基于inp的光电探测器，该探测器被键合在含有si3n4布线光子电路的CMOS晶圆上。探测器制造与晶圆级加工步骤兼容，保证了对下一代电子集成电路加工的兼容性。本文介绍了集成技术和实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 IEEE LEOS Annual Meeting Conference Proceedings

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