A class-F 5 – 6 GHz 10-W GaN-on-SiC amplifier

Abstract

A Class-F 5 - 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading termination for optimal power and efficiency, and simultaneously proper second-harmonic termination for high-efficiency. 5 amplifiers were built and tested. Test results showed excellent 3dB-compression performance with drain efficiency ranging from 60 to 79.5% and power above 10 W.