An Accurate Subthreshold Analytical Model for Black Phosphorus Heterojunction Dopingless Tunneling Field-Effect Transistors

Abstract

This paper presents an accurate subthreshold analytical model for black phosphorus heterojunction dopingless tunneling field-effect transistors (HD-TFET). At first, the center potential is derived by solving Poisson's equation with ingeniously developed boundary conditions, which the electrical field are derived from this center potential. Finally, the subthreshold drain current model of black phosphorus heterojunction dopingless TFET is developed using maximum generation rate considering the local minimum effect in the device structure energy band diagram. The proposed model is investigated for the channel length, gate dielectric constant and gate oxide thickness variation. To ensure the performance of the developed model, the model results are compared and validated with the TCAD simulation results. The modeled results show the close agreement with the TCAD simulation results without the need of fitting parameters. It was confirmed that the model is able to correctly predict most of the physical phenomena occurring inside the black phosphorus heterojunction dopingless TFET.