T. Nakatani, T. Katsuki, H. Okuda, O. Toyoda, S. Ueda, F. Nakazawa
{"title":"Piezoelectric reliable RF-MEMS switch with narrow contact-gap using wafer-bond packaging","authors":"T. Nakatani, T. Katsuki, H. Okuda, O. Toyoda, S. Ueda, F. Nakazawa","doi":"10.1109/MWSYM.2013.6697667","DOIUrl":null,"url":null,"abstract":"This paper presents a low-cost packaged and reliable piezoelectric-actuated RF-MEMS switch for mobile communications. We fabricated a stiff single crystal silicon (SCS) beam that has an actuator and a contact bump on an SOI wafer without backside etching. We bonded the wafer to a ceramic cap wafer, directly packaging a switch with a contact gap of 0.5-μm not using sacrificial layers. The switch operated up to 1 billion cycles keeping a low insertion loss (<;0.4 dB up to 5GHz) at 20-V driving voltage. The surface mountable SPST switch was 1.6 × 1.1 × 0.8 mm in size.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a low-cost packaged and reliable piezoelectric-actuated RF-MEMS switch for mobile communications. We fabricated a stiff single crystal silicon (SCS) beam that has an actuator and a contact bump on an SOI wafer without backside etching. We bonded the wafer to a ceramic cap wafer, directly packaging a switch with a contact gap of 0.5-μm not using sacrificial layers. The switch operated up to 1 billion cycles keeping a low insertion loss (<;0.4 dB up to 5GHz) at 20-V driving voltage. The surface mountable SPST switch was 1.6 × 1.1 × 0.8 mm in size.