Performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordheim stress

Abstract

The performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordhein stress is discussed. The measured performance parameters include threshold voltage, peak transconductance, and saturation-region drain current. For moderate degradation levels (up to 10% decrease in saturation current), the degradation was found to be a universal function to the injected electron charge, independent of the stress voltage for DC stress and independent of the stress waveform for pulsed stress conditions.<>