Research on TSV Thermal-mechanical Reliability Based on Finite Element Analysis

Fangchao Huang, Zhengwei Fan, Xun Chen, Yao Liu, Shufeng Zhang, Yashun Wang, Yu Jiang
{"title":"Research on TSV Thermal-mechanical Reliability Based on Finite Element Analysis","authors":"Fangchao Huang, Zhengwei Fan, Xun Chen, Yao Liu, Shufeng Zhang, Yashun Wang, Yu Jiang","doi":"10.1109/phm-qingdao46334.2019.8942816","DOIUrl":null,"url":null,"abstract":"Three-dimensional integrated packaging technology is recognized as the fourth generation packaging technology with the hope of breaking Moore's law. And through silicon via(TSV) technology is the key of three-dimensional packaging technology. In order to study the thermal-mechanical reliability of TSV structure, the finite element method was used to simulate the equivalent stress and deformation of TSV with different TSV size, aspect ratio, pitch and structure. The distribution of equivalent stress and deformation was obtained. The simulation results showed that the increase of TSV size would lead to the increase of equivalent stress and deformation, the aspect ratio of TSV would only affect deformation, and the increase of TSV pitch would lead to the decrease of equivalent stress and the increase of deformation. In addition, TSV filled with parylene was analyzed in this paper. The stress could be effectively released by increasing the size of parylene.","PeriodicalId":259179,"journal":{"name":"2019 Prognostics and System Health Management Conference (PHM-Qingdao)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Prognostics and System Health Management Conference (PHM-Qingdao)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/phm-qingdao46334.2019.8942816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Three-dimensional integrated packaging technology is recognized as the fourth generation packaging technology with the hope of breaking Moore's law. And through silicon via(TSV) technology is the key of three-dimensional packaging technology. In order to study the thermal-mechanical reliability of TSV structure, the finite element method was used to simulate the equivalent stress and deformation of TSV with different TSV size, aspect ratio, pitch and structure. The distribution of equivalent stress and deformation was obtained. The simulation results showed that the increase of TSV size would lead to the increase of equivalent stress and deformation, the aspect ratio of TSV would only affect deformation, and the increase of TSV pitch would lead to the decrease of equivalent stress and the increase of deformation. In addition, TSV filled with parylene was analyzed in this paper. The stress could be effectively released by increasing the size of parylene.
基于有限元分析的TSV热力可靠性研究
三维集成封装技术被认为是有望打破摩尔定律的第四代封装技术。而透硅通孔(TSV)技术是三维封装技术的关键。为了研究TSV结构的热-机械可靠性,采用有限元法对不同TSV尺寸、纵横比、节距和结构的TSV进行等效应力和等效变形模拟。得到了等效应力和等效变形的分布。仿真结果表明,TSV尺寸的增加会导致等效应力和变形的增加,TSV的宽高比只会影响变形,TSV节距的增加会导致等效应力的减小和变形的增加。此外,本文还对聚对二甲苯填充的TSV进行了分析。增大聚对二甲苯的尺寸可以有效地释放应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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