{"title":"Silicon-Polymer Electro-thermal bimorph actuators with SiC bottom-layer for large out-of-plane motion and improved power efficiency","authors":"M. Aarts, Jia Wei, P. Sarro","doi":"10.1109/NEMS.2012.6196768","DOIUrl":null,"url":null,"abstract":"This paper presents the fabrication and characterization of a silicon-polymer electro-thermal out-of-plane bimorph actuator with SiC as bottom layer, for improved motion and better energy efficiency. The proposed concept improves on an earlier design using aluminum by making the bottom layer of SiC, a more robust material with a lower CTE. A process is developed to fabricate out-of-plane actuators with either Al or SiC as bottom layer. Both devices are characterized and their performances are compared. The new actuator with SiC as bottom layer shows a higher displacement (15.5μm) with less actuation voltage (4 V) and an average temperature increase on the actuator of 82°C.","PeriodicalId":156839,"journal":{"name":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2012.6196768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the fabrication and characterization of a silicon-polymer electro-thermal out-of-plane bimorph actuator with SiC as bottom layer, for improved motion and better energy efficiency. The proposed concept improves on an earlier design using aluminum by making the bottom layer of SiC, a more robust material with a lower CTE. A process is developed to fabricate out-of-plane actuators with either Al or SiC as bottom layer. Both devices are characterized and their performances are compared. The new actuator with SiC as bottom layer shows a higher displacement (15.5μm) with less actuation voltage (4 V) and an average temperature increase on the actuator of 82°C.