Preparation of Cu2O/TiO2 nanotube arrays and their photoelectrochemical properties as hydrogen-evolving photoanode

Lixia Sang, Jing Zhang, Yudong Zhang, Yangbo Zhao, Jia Lin
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引用次数: 2

Abstract

Cu2O is an environment-friendly p-type semiconductor with narrow band gap (2.0~2.2eV), which has become a popular sensitizer of TiO2. The present work is focused on the preparation of Cu2O/TiO2 nanotube arrays heterostructures via electrochemical deposition. TiO2 nanotube arrays were prepared by anodic oxidation method and calcined at 450°C, then Cu2O were deposited on TiO2 nanotube arrays in a three-electrode system with surfactants PVP in electrolyte at different deposition potentials (-0.2V and-0.3V) for deposition time 5min. The results show that Cu2O nanoparticles deposit on TiO2 nanotube successfully. The obtained Cu2O nanoparticles were quite different in size at deposition potential -0.2V and -0.3V. The resulting Cu2O/TiO2 nanotube arrays have the significant photoresponse in visible light region. Under irradiation of solar simulator (AM1.5, 100mW/cm2), the photocurrent density of the Cu2O/TiO2 nanotube arrays when Cu2O was deposited at a voltage of -0.3V is more than that of pure TiO2 nanotube arrays.
Cu2O/TiO2纳米管阵列的制备及其出氢光阳极的光电化学性能
Cu2O是一种窄带隙(2.0~2.2eV)的环保型p型半导体,已成为TiO2的热门敏化剂。本文主要研究了电化学沉积法制备Cu2O/TiO2纳米管阵列异质结构。采用阳极氧化法制备TiO2纳米管阵列,在450℃下煅烧,在不同沉积电位(-0.2V和0.3 v)的电解液中,加入表面活性剂PVP的三电极体系中沉积Cu2O,沉积时间为5min。结果表明,Cu2O纳米颗粒成功沉积在TiO2纳米管上。在-0.2V和-0.3V沉积电位下,得到的Cu2O纳米颗粒尺寸差异较大。所得Cu2O/TiO2纳米管阵列在可见光区具有显著的光响应。在太阳模拟器(AM1.5, 100mW/cm2)照射下,在-0.3V电压下沉积Cu2O时,Cu2O/TiO2纳米管阵列的光电流密度大于纯TiO2纳米管阵列。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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