Wafer Level Reliability Monitoring of NBTI Using Polysilicon Heater Structures for Production Measurements

Abstract

The use of polysilicon heater structures provides a useful tool for fast NBTI monitoring of wafer level reliability in production measurements. It could reduce device relaxation in NBTI measurement without special ultra-fast test equipment. In this work NBTI characterization from a parametric tester using polysilicon heater test structures for 1.2V PMOS devices placed in the scribe line of a 65 nm BCD technology was performed with real-time feedback temperature control methodology without changing the chuck temperature to realize NBTI reliability assessment with a short test time.