Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction model analysis

2022 International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics ( DISCOVER) Pub Date : 2022-10-14 DOI:10.1109/DISCOVER55800.2022.9974906

Srija Alla, Vinod Kumar Joshi, S. Bhat

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Abstract

The voltage-gated spin-orbit torque (VGSOT) field-free switching mechanism provides the combined benefit of voltage-control of magnetic anisotropy (VCMA), spin-orbit torque (SOT), and the effect of exchange bias produced by the anti-ferromagnetic electrode simultaneously paving the way for the development of a realistic, ultra-low-power next-generation MRAM. This paper presents a detailed analysis of VCMA-assisted SOT writing properties on the free layer of the perpendicular magnetic tunnel junction (pMTJ) device. The magnetization reversal process caused by SOT is observed to be dependent on the pulse duration, and the voltage applied at the corresponding terminal. Further, the impact of terminal voltages and pulse width to induce SOT and VCMA effect on switching delay is analyzed. We also investigated the exchange bias effect on free layer thickness and switching delay along with the antiparallel (AP) and parallel (P) resistance of the model. Finally, the influence of gate voltage on SOT switching characteristics is investigated.

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电压门控自旋轨道转矩磁隧道结模型分析

电压门控自旋轨道转矩(VGSOT)无场开关机制提供了磁各向异性(VCMA)电压控制、自旋轨道转矩(SOT)和反铁磁电极产生的交换偏置效应的综合优势，同时为开发现实的超低功耗下一代MRAM铺平了道路。本文详细分析了vcma辅助SOT在垂直磁隧道结(pMTJ)器件自由层上的写入性能。观察到由SOT引起的磁化反转过程取决于脉冲持续时间和相应端子处施加的电压。进一步分析了终端电压和诱导SOT和VCMA效应的脉宽对开关延迟的影响。我们还研究了交换偏置对自由层厚度和开关延迟以及模型的反平行(AP)和平行(P)电阻的影响。最后，研究了栅极电压对SOT开关特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics ( DISCOVER)

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