InAs QDs Monolithically Grown on COMS Compatible Si (001) and SOI Platform with Strong Emission at 1300 nm and 1550 nm

Abstract

Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on U-shape patterned Si (001) and SOI substrates. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, high-quality GaAs layers are obtained with threading dislocation density approximately ∼ 106 cm−2 via electron channeling contrast image (ECCI) method. Then strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) and SOI substrates, respectively.