E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process

Abstract

This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A one-stage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73–74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (Vd) is 10 V and the drain current (Id) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90–95 GHz when the Id is 10 mA and Vd is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4–6 dB at 92–95 GHz when an Id of 10–20 mA is used in each stage with same drain bias.