Modeling of GaAs Multiplier Schottky Diode in Terahertz Band

Nan Hu, Wenqing Xie, Jianrui Liu, Shuang Liu, Q. Zeng, Yanbin Luo
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引用次数: 2

Abstract

Modeling of terahertz multiplier GaAs Schottky diodes was realized by divided into nonlinear part and linear parasitic part. The nonlinear SPICE parameters of Schottky diode was obtained by the DC measurement. The linear parasitic of GaAs Schottky diode was extracted by simulation in the electromagnetic field software of HFSS. The circuit model of diodes was realized in the circuit software of ADS. The non-linear junction part of the diode was modified to take into account the self-heating effect during actual operation. A frequency multiplier operating at 170 GHz was designed and implemented based on the mode. The measured and simulated frequency multiplier efficiency trends are in good agreement.
太赫兹波段GaAs倍频肖特基二极管的建模
将太赫兹倍频GaAs肖特基二极管分为非线性部分和线性寄生部分进行建模。通过直流测量获得了肖特基二极管的非线性SPICE参数。在HFSS电磁场软件中仿真提取了GaAs肖特基二极管的线性寄生。在ADS电路软件中实现了二极管的电路模型,并对二极管的非线性结部分进行了修改,以考虑实际工作时的自热效应。基于该模式设计并实现了工作在170 GHz的倍频器。实测值和仿真值的倍频器效率趋势吻合较好。
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