Efficient Electron Carrier distribution of n+ MoS2/i-MoS2/p-Si Heterojunction Solar Cell

Abstract

In this paper, modeling and simulation study of energy harvested nano electronics of PV device and its functions under different light intensity have been discussed. The emitter layer of the proposed solar cell has been designed to enhance the photocurrent efficiency even at low electric field. The Electron-hole pair generation of the proposed model is increased to $4.9^{\star}10^{28}[1/(\mathrm{m}^{2_{\star}}s)]$ due to optimized intrinsic $Mo\mathrm{S}_{2}$ layer thickness. As a result, the charge carriers distribution enhanced the carrier collection efficiency in the absorber layer. This study reveals that the proposed Energy harvesting device Open-circuit Voltage ($\mathrm{V}_{0\mathrm{C}}$) and Short circuit Current density(Jsc) are 1.982[V], 31.22[mA/cm2]. respectively and its efficiency found to be 31.91 %. These simulations showed that can be environmental stability and excellent carrier distribution solar cell.