Frequency scalable large signal transistor behavioral model based on admittance domain formulation

Abstract

This paper introduces the first formulation and approach that enables measurement based non-linear behavioral look-up table transistor models to be frequency scalable. The experimental results on a M/A-COM GaN HFET from 2 GHz to 8 GHz, support theoretical analysis that frequency domain behavioral models defined in the admittance domain have frequency scalable model coefficients. Load-pull results indicate that the model can accurately predict non-linear behavior at frequencies where the large signal measurements were not performed.