Speeding up simulation time in EEPROM memory designs

H. Aziza, B. Delsuc, J. Portal, D. Née
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引用次数: 3

Abstract

This paper presents an efficient technique to decrease simulation lime of EEPROM memory arrays. This technique is based on the complexity reduction of an existing compact EEPROM model. This original model is unsuitable when dealing with large memory arrays simulations. To overcome this limitation, the authors propose two alternative models which allow reducing time and memory space overheads when compared to the compact model. The first EEPROM model (level 1). is as simple as possible and provides fast simulation time. The second model (level 2) is a compromise between the compact model and the level 1 model. We also present simulation time results using these different models within memory arrays
加速EEPROM存储器设计的仿真时间
提出了一种有效降低EEPROM存储器阵列仿真时间的方法。该技术是基于现有紧凑EEPROM模型的复杂性降低。这种原始模型不适用于大型存储阵列的模拟。为了克服这一限制,作者提出了两种替代模型,与紧凑模型相比,它们可以减少时间和内存空间开销。第一个EEPROM模型(1级)尽可能简单,并提供快速的仿真时间。第二个模型(第2级)是紧凑型模型和第1级模型之间的折衷。我们还给出了在存储器阵列中使用这些不同模型的仿真时间结果
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