Plasmon enhanced optical near-field probing of metal nano-aperture GaAs VCSEL

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382781

J. Hashizume, F. Koyama

引用次数: 0

Abstract

We demonstrate a metal nano-aperture GaAs VCSEL for sub-wavelength optical near-filed probing, which exhibits the strong plasmon enhancement of both optical near-field intensity and voltage signals by introducing a metal nano-particle in the nano-aperture.

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等离子体增强金属纳米孔径GaAs VCSEL光学近场探测

我们展示了一种用于亚波长光学近场探测的金属纳米孔径GaAs VCSEL，通过在纳米孔径中引入金属纳米粒子，该器件显示出光学近场强度和电压信号的强等离子体增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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