{"title":"Single-chip RF Front-end with T/R Switch on Standard Silicon Technology for 5-GHz WLANs","authors":"D. Zito, B. Neri","doi":"10.1109/ECWT.2006.280513","DOIUrl":null,"url":null,"abstract":"A fully integrated RF front-end on standard silicon technology for 5-GHz indoor WLAN applications is presented. It includes an innovative T/R antenna switch which does not require any additional technological steps and provides better performance (the measured insertion losses are 0.2 and 0.9 dB, in R and T modes respectively) with respect to those obtained by using PIN diodes as switching elements","PeriodicalId":217349,"journal":{"name":"2006 European Conference on Wireless Technology","volume":"1081 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Conference on Wireless Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECWT.2006.280513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A fully integrated RF front-end on standard silicon technology for 5-GHz indoor WLAN applications is presented. It includes an innovative T/R antenna switch which does not require any additional technological steps and provides better performance (the measured insertion losses are 0.2 and 0.9 dB, in R and T modes respectively) with respect to those obtained by using PIN diodes as switching elements