18 GHz high gain monolithically integrated InP/InGaAs PIN/HBT-Receiver

Abstract

We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of . Base and collector layers of the HBT have been used to implement the photodiodes. The three-stage-amplifi erachieves a transimpedance of ( ) and the optical/electrical -bandwidth of the entire receiver is . This corresponds to a transimpedancebandwidth product of , which is one of the highest values published to date.