InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands

Abstract

We present an experimental study of a phototransistor (HPT) based on the heterojunction bipolar transistor technology (HBT). The developed HPT yields an internal gain of 14 dl3 at 20 GHz with an internal gain cut-off fiequency of 33 GHz. Equivalent circuit analysis shows good agreement with experimental results.