{"title":"Electronic properties of WO3 quantum films","authors":"D. Migas, V. Shaposhnikov","doi":"10.1109/CRMICO.2010.5632427","DOIUrl":null,"url":null,"abstract":"By ab initio calculations we show that quantum confinement effects do not affect the energy band gap in the quantum films of WO3 thicker than 1.5 nm. We have also revealed that states of the surface atoms stabilize the band-gap edges.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"383 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By ab initio calculations we show that quantum confinement effects do not affect the energy band gap in the quantum films of WO3 thicker than 1.5 nm. We have also revealed that states of the surface atoms stabilize the band-gap edges.