Compact Altered Current Starved CMOS VCO in 130 nm with Broad Linear Tuning and Ultra-Low Power Dissipation

Suhas D
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Abstract

Excellent linearity with broad tuning range, low power dissipation, and less die area are the challenges existing in Voltage Controlled Oscillators (VCOs) employing CMOS technology. This work demonstrates an ultra-low power, altered Current-Starved (CS) VCO having a reduction in the number of transistors while achieving a linear tuning range for a broad range of frequencies. Simulated in AWR, the proposed VCO uses PTM 0.13 μm SPICE parameters at 1.3 V. Within the control voltage of 0.55 V – 1 V, linearity in oscillation frequencies from 1.709 GHz – 5.939 GHz indicating a broad tuning range of 95.12 % is obtained. The maximum power dissipated by the loaded oscillator circuit is 0.1977 μW (-37.04 dBm). Phase noise of -66.3 dBc/Hz is observed for a 1.709 GHz carrier at an offset frequency of 1 MHz, corresponding to a calculated Figure of Merit (FOM) of 248.82 dBc/Hz/mW. This ultra-low power consuming CS VCO having the characteristics of linear as well as broad tuning range, and low phase noise is acceptable for satellite applications in the L-C band.
具有宽线性调谐和超低功耗的130nm紧凑变电流饥渴CMOS压控振荡器
良好的线性度、宽的调谐范围、低功耗和更小的芯片面积是采用CMOS技术的压控振荡器(vco)面临的挑战。这项工作展示了一种超低功耗,改变电流饥渴(CS)的压控振荡器,减少了晶体管数量,同时实现了宽频率范围的线性调谐范围。在AWR中进行仿真,该VCO采用PTM 0.13 μm SPICE参数,电压为1.3 V。在0.55 V ~ 1 V的控制电压范围内,振荡频率在1.709 GHz ~ 5.939 GHz范围内呈线性,调谐范围为95.12%。负载振荡器电路的最大功率耗散为0.1977 μW (-37.04 dBm)。在偏移频率为1mhz时,1.709 GHz载波的相位噪声为-66.3 dBc/Hz,对应于计算出的性能因数(FOM)为248.82 dBc/Hz/mW。这款超低功耗的CS压控振荡器具有线性和宽调谐范围的特点,相位噪声低,适用于L-C波段的卫星应用。
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