Using AMRO Quantum Oscillations to Probe the Fermi Surface of Quasi-2d Layered Organic Conductors in Low Temperatures and High Magnetic Fields

K. Storr
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Abstract

Organic materials are generally synthesized as single crystals with alternating organic-inorganic layers. This induces a reduced dimensionality, leading to a Quasi-two-dimensional (Q2D) salt, having higher conductivity along the crystal plane. This accounts for the ratio of the inter-plane to in-plane resistance reaching upward to an order of a thousand. The electrical anisotropy is seen at Room Temperature and with temperature change and in the presence of a magnetic field which shows up in magnetoresistance (MR), the sample’s resistance response to a magnetic field. By orienting the sample with respect to the magnetic field, we can study the electrical anisotropy evidenced by quantum oscillations in the resistance in the form of Shubnikov-de Haas (SdH) and angular-dependent magnetoresistance oscillations (AMRO). The differences between the two are: SdH measurements display oscillations at fixed temperature and angle as the magnetic field is swept; whereas, AMRO is observed at fixed temperature and magnetic field as the orientation of the sample (angle) is changed. The AMRO angular changes are two types: polar (θ) and azimuthal (φ). The polar angle θ is defined as the angle between the magnetic field and the normal to the two-dimensional organic cation layer, while the azimuthal angle φ is the direction of the magnetic field’s rotation relative to the a-b plane. With SdH oscillatory data, we can extract meaningful information such as the: effective mass, Dingle temperature, frequency of the electron orbits and FS areas. AMRO data analysis leads to direct probing of the FS surface where we can quantify the Fermi wave vector (kf) and map the shape and warping (if present) of the FS and compare it with predictions from band structure calculations. Of note is the magnetic analog of SdH which is de Haas-van Alphen oscillations which shows up as oscillations in the magnetization. The treatment of these oscillations uses LifshitzKosevich Theory [2,3], which when applied to SdH oscillations is extremely effective. In this paper, we will discuss AMRO oscillations and the formalism of their analysis by measuring the interlayer magnetoresistance in a tilted magnetic field at fixed temperatures. We will provide an example of past data for clarity of our discussion [1].
利用AMRO量子振荡在低温强磁场下探测准二维层状有机导体的费米表面
有机材料通常是由有机-无机层交替的单晶合成的。这导致了一个降低的维度,导致准二维(Q2D)盐,沿晶面具有更高的电导率。这就解释了平面间与平面内电阻的比率上升到一千的数量级。电的各向异性是在室温下看到的,随着温度的变化和磁场的存在,磁电阻(MR)显示了样品对磁场的响应。通过将样品相对于磁场定向,我们可以研究以Shubnikov-de Haas (SdH)和角相关磁阻振荡(AMRO)形式存在的电阻的量子振荡所证明的电各向异性。两者的不同之处在于:SdH测量显示磁场扫掠时在固定温度和角度下的振荡;而在固定温度和磁场条件下,随着样品取向(角度)的改变,可以观察到AMRO。AMRO的角度变化有两种类型:极角(θ)和方位角(φ)。极角θ定义为磁场与二维有机阳离子层的法线夹角,方位角φ定义为磁场相对于a-b平面的旋转方向。利用SdH振荡数据,我们可以提取有效质量、丁格尔温度、电子轨道频率和FS区域等有意义的信息。AMRO数据分析导致对FS表面的直接探测,在那里我们可以量化费米波矢量(kf),绘制FS的形状和翘曲(如果存在),并将其与带结构计算的预测进行比较。值得注意的是SdH的磁模拟,它是德哈斯-范阿尔芬振荡,在磁化中表现为振荡。这些振荡的处理使用LifshitzKosevich理论[2,3],当应用于SdH振荡时是非常有效的。在本文中,我们将通过测量固定温度下倾斜磁场中的层间磁电阻来讨论AMRO振荡及其分析的形式。为了使我们的讨论更清晰,我们将提供一个过去数据的例子[1]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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