3D Capacitive Interconnections for High Speed Interchip Communication

R. Canegallo, A. Fazzi, L. Ciccarelli, L. Magagni, F. Natali, P. Rolandi, E. Jung, L. Cioccio, R. Guerrieri
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引用次数: 6

Abstract

A 3D interconnection scheme based on capacitive coupling for high speed chip to chip communication has been implemented in a 0.13 mum CMOS process. This paper provides detailed design example for both synchronous and asynchronous transmitter and receiver circuits. The first approach shows with electrodes 15 times 15 mum2 a wide range of operating frequency up to 900 MHz with an energy consumption of 41fJ/bit. In the asynchronous scheme we demonstrate with electrodes 8 times 8 mum2 a vertical propagation of clock at 1.7 GHz and a propagation delay of 420 ps for general purpose signal with energy consumption of 80 f J/bit. Functionality and performance have been demonstrated by using both die-level and wafer-level assembly flows and BER measurements show the reliability of these AC interconnections with no error on more than 1013 bits transmitted.
高速芯片间通信的三维电容互连
在0.13 μ m CMOS工艺下,实现了一种基于电容耦合的高速片间通信三维互连方案。本文给出了同步和异步发送和接收电路的详细设计实例。第一种方法显示,使用15倍15 mum2的电极,工作频率范围可达900 MHz,能耗为41fJ/bit。在异步方案中,我们用8 × 8 mum2电极演示了时钟在1.7 GHz的垂直传播,传输延迟为420 ps,用于通用信号,能耗为80 f J/bit。通过使用芯片级和晶圆级组装流程证明了功能和性能,并且误码率测量显示了这些交流互连的可靠性,在传输超过1013位的情况下没有错误。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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