{"title":"Monolithic 2.5kV RMS, 1.8V–3.3V dual-channel 640Mbps digital isolator in 0.5μm SOS","authors":"Y. Moghe, A. Terry, D. Luzon","doi":"10.1109/SOI.2012.6404389","DOIUrl":null,"url":null,"abstract":"In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.