A novel power LDMOSFET structure with high breakdown voltage

Abstract

Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.