A 45Gb/s 7.5um-radius Si micro-ring modulator driven by 3.3Vpp voltage

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273441

Kuan-Yu Chen, Jheng-Huei Dong, Rih-You Chen, Yang-Jeng Chen, Y. Hung, Y. Chiu, T. Yen

引用次数: 1

Abstract

A Si micro-ring modulator with 7.5μm small radius has been demonstrated on a Si-on-insulator (SOI) chip. 45Gb/s open eye with above 2.52dB extinction ratio through 3.3 Vpp has been attained in low electrical parasitic.

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一个由3.3Vpp电压驱动的45Gb/s 7.5um-半径Si微环调制器

在SOI芯片上实现了半径7.5μm的硅微环调制器。在低电寄生条件下实现了45Gb/s的裸眼，消光比在2.52dB以上，消光比在3.3 Vpp以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 Opto-Electronics and Communications Conference (OECC)

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