Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs

Abstract

A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.