Influence of interfacial exchange coupling on microwave permeability in exchange coupled CoFe/MnIr bilayers

D. Kim, C. Kim, M. Tsunoda, M. Yamaguchi, M. Takahashi
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引用次数: 0

Abstract

The Co70Fe30(t=100 nm)/MnIr(tAF nm) bilayers with tAF=0, 2,4, 10 and 20 were deposited onto a 20 nm Cu buffer layer grown on oxide silicon wafer at room temperature by dc magnetron sputtering method. A magnetic field of 30 Oe was applied during the deposition of bilayers. The CoFe/MnIr bilayers were annealed at 200degC and 340degC for 1 h in a magnetic field of 1 kOe in vacuum along the direction of the applied field during the deposition. The high frequency transverse permeability was measured in the frequency range of 100 MHz to 9 GHz. The Heb and coercive field (Hc) with field angle was measured with a Magneto-Optic Kerr Effect (MOKE) instrument. The uniaxial and unidirectional anisotropy constant was measured by torque magnetometers in order to obtain the uniaxial and unidirectional anisotropy constant of CoFe layer. The interfacial exchange coupling field has been estimated from the curve fitting of Heb and coercive field (Hc) with field angle by using the Stoner-Wohlfarth model.
界面交换耦合对交换耦合CoFe/MnIr双层微波磁导率的影响
采用直流磁控溅射法制备了tAF=0、2、4、10和20的Co70Fe30(t=100 nm)/MnIr(tAF nm)双层膜,并在室温下沉积在氧化硅片上生长的20 nm Cu缓冲层上。在双分子层沉积过程中施加了30 ω的磁场。将CoFe/MnIr双层膜沿施加磁场的方向,在真空中分别于200℃和340℃下,在1 kOe的磁场下退火1 h。在100 MHz ~ 9 GHz频率范围内测量了高频横向磁导率。用磁光克尔效应(MOKE)仪测量了带场角的Heb和矫顽力场(Hc)。为了得到CoFe层的单轴和单向各向异性常数,利用转矩磁强计测量了CoFe层的单轴和单向各向异性常数。利用Stoner-Wohlfarth模型对Heb和矫顽力场(Hc)随场角的曲线拟合,估计了界面交换耦合场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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