Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme

P. Pouyan, E. Amat, A. Rubio
{"title":"Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme","authors":"P. Pouyan, E. Amat, A. Rubio","doi":"10.1109/ECCTD.2015.7300125","DOIUrl":null,"url":null,"abstract":"One of the most promising emerging technologies is based on the use of memristive devices. Although capable of implementing certain type of logic circuits, they are being extensively used for memory applications. Beside memristor advantages such as high scalability, their drawbacks including manufacturing process variability and limited read/write endurance, could risk their future utilization. In this work we propose an implementation of a proactive reconfiguration strategy alongside a testing procedure to detect the weakest memory cells inside the crossbar. Such a realization can extend the crossbar lifetime with spare components and avoid memory cell failures.","PeriodicalId":148014,"journal":{"name":"2015 European Conference on Circuit Theory and Design (ECCTD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2015.7300125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

One of the most promising emerging technologies is based on the use of memristive devices. Although capable of implementing certain type of logic circuits, they are being extensively used for memory applications. Beside memristor advantages such as high scalability, their drawbacks including manufacturing process variability and limited read/write endurance, could risk their future utilization. In this work we propose an implementation of a proactive reconfiguration strategy alongside a testing procedure to detect the weakest memory cells inside the crossbar. Such a realization can extend the crossbar lifetime with spare components and avoid memory cell failures.
非自适应主动重配置方案的忆阻横条设计与测试
最有前途的新兴技术之一是基于记忆装置的使用。虽然能够实现某些类型的逻辑电路,但它们被广泛用于存储应用。除了高可扩展性等优点外,它们的缺点包括制造工艺的可变性和有限的读写耐久性,可能会危及其未来的应用。在这项工作中,我们提出了一种主动重新配置策略的实施,以及检测横梁内最弱记忆细胞的测试程序。这样的实现可以延长具有备用元件的交叉杆寿命,避免存储单元故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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