{"title":"Phase-resolved semiconductor overlay metrology with a dark field holographic microscope","authors":"V. Tenner, C. Messinis, A. Boef","doi":"10.1364/DH.2019.M4B.7","DOIUrl":null,"url":null,"abstract":"Current optical sensors used for overlay metrology during semiconductor manufacturing are limited on the available stack-thickness wavelength combinations. We present a dark field holographic sensor concept that lifts this limitation and show an experimental demonstration.","PeriodicalId":448778,"journal":{"name":"Digital Holography and Three-Dimensional Imaging 2019","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digital Holography and Three-Dimensional Imaging 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/DH.2019.M4B.7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Current optical sensors used for overlay metrology during semiconductor manufacturing are limited on the available stack-thickness wavelength combinations. We present a dark field holographic sensor concept that lifts this limitation and show an experimental demonstration.