{"title":"A novel 75 GHz InP HEMT dynamic divider","authors":"Chris J. Madden, Doug R. Snook, R. Tuyl","doi":"10.1109/GAAS.1996.567827","DOIUrl":null,"url":null,"abstract":"A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.