{"title":"Effect of Variation of Thickness on Integrated Antenna System in Silicon","authors":"A. Bin Islam, S. Mostafa, W. Tushar, A. Rashid","doi":"10.1109/ICICT.2007.375366","DOIUrl":null,"url":null,"abstract":"In this study we have investigated the effects of variation of silicon substrate thickness on the gain of integrated antennas in on-chip wireless interconnect system. The antennas were fabricated on silicon wafer and the excitation was applied horizontally. Simulation of the test structure has been carried out using ANSOFT High Frequency Structure Simulation (HFSS) program employing the three dimensional finite element methods. A simple analytical model is also developed, using ground reflection (two ray) model to predict the gain in various thicknesses of silicon substrate. Results obtained from the analytic model and simulated data are presented here for comparison.","PeriodicalId":206443,"journal":{"name":"2007 International Conference on Information and Communication Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Information and Communication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICT.2007.375366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this study we have investigated the effects of variation of silicon substrate thickness on the gain of integrated antennas in on-chip wireless interconnect system. The antennas were fabricated on silicon wafer and the excitation was applied horizontally. Simulation of the test structure has been carried out using ANSOFT High Frequency Structure Simulation (HFSS) program employing the three dimensional finite element methods. A simple analytical model is also developed, using ground reflection (two ray) model to predict the gain in various thicknesses of silicon substrate. Results obtained from the analytic model and simulated data are presented here for comparison.