Simulation of high-temperature millisecond annealing based on an atomistic modeling of boron diffusion in silicon

Abstract

In this paper, boron ion implantation and subsequent annealing processes in Si were modeled with two kinds of atomistic methods, i.e. molecular dynamics (MD) and Monte Carlo (MC) methods. Through the simulation study, high temperature millisecond annealing is proven to be promising technique, while the simulation results indicate that it still needs pre-/post thermal/amorphization processes being optimized for actual device manufacturing.