Current enhanced PNPN tunnel field-effect transistor with L-shaped gate

Abstract

In this paper, a new PNPN tunnel field-effect transistor with L-shaped gate (LG-PNPN TFET) is proposed and investigated by numerical device simulator bringing significant on-state current enhancement. Higher drive current is achieved at VDD = 1.0V than traditional PNPN TFET because of both the line and point tunneling between the source and N+ pocket. Key parameters like the pocket width and doping concentration are further studied for device performance optimization.