GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications

Abstract

We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P3dB) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the Doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the Doherty amplifier. The implemented Doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P3dB). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured Relative Constellation Error (RCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.