A 77 GHz 4-Way Power Amplifier with 20.2 dBm Output Power in 40 nm CMOS

Chao Yang, Xiaoming Liu, Wandong Tao, Yuekang Guo, J. Jin
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Abstract

This paper presents a fully integrated 77 GHz power amplifier (PA) in a 40 nm bulk CMOS process for automotive radar. A 4-way series-parallel power combiner using the distributed active transformer (DAT) technique is proposed to increase output power. The DAT technique reduces the loss and improved the phase/gain balance between paths. To achieve the optimal output power and efficiency, load pull matching is performed using the DAT and the connection lines. At 77 GHz, this proposed two-stage PA achieves a saturated output power $(\mathbf{P}_{\mathbf{sat}})$ of 20.4 dBm and a peak power-added efficiency $(\mathbf{PAE}_{\max})$ of 18%. It demonstrates a bandwidth of 12 GHz with a peak power gain of 12dB. The core area of the PAis 0.15 mm2 and the working supply is 1.1V.
一个输出功率为20.2 dBm的40nm CMOS 77 GHz 4路功率放大器
提出了一种用于车载雷达的40nm体CMOS全集成77ghz功率放大器(PA)。为了提高输出功率,提出了一种采用分布式有源变压器(DAT)技术的四路串并联功率合成器。该技术降低了损耗,改善了路径间的相位/增益平衡。为了达到最佳的输出功率和效率,使用DAT和连接线进行负载拉匹配。在77 GHz时,该两级放大器的饱和输出功率$(\mathbf{P}_{\mathbf{sat}})$为20.4 dBm,峰值功率附加效率$(\mathbf{PAE}_{\max})$为18%。它的带宽为12ghz,峰值功率增益为12dB。PAis的核心面积为0.15 mm2,工作电源为1.1V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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