3.3kV Power Module for Electric Distribution Equipment with SiC Trench-Gate MOSFET

R. Takayanagi, K. Taniguchi, M. Hoya, N. Kanai, T. Tsuji, M. Hori, Y. Ikeda, K. Maruyama, I. Kawamura
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引用次数: 2

Abstract

3.3 kV / 200 A All-SiC module with trench-gate SiC MOSFETs is developed for static var compensator (SVC), a type of the electric distribution equipment. This module has the structural feature; resin-mold single-switch units are arrayed and electrically connected by bus-bars to make the circuit configuration dual (2-in-1). This structure leads to the smaller stack and the higher long-term reliability. Applied trench-gate SiC MOSFETs, lower loss is also accomplished. ON-state resistance is reduced around 10%. In addition, 60% reduction of total switching loss is achieved. These characteristics of low energy loss can contribute to downsizing of SVC equipment as well as energy saving.
3.3kV SiC沟栅MOSFET配电设备电源模块
针对静态无功补偿器(SVC)这一配电设备,研制了3.3 kV / 200a带沟栅SiC mosfet的全SiC模块。该模块具有结构特点;树脂模单开关单元通过母线排列和电连接,使电路配置双(2合1)。这种结构可以实现更小的堆叠和更高的长期可靠性。应用沟栅SiC mosfet,也实现了较低的损耗。导通状态电阻降低约10%。此外,总开关损耗降低了60%。这些低能量损失的特点有助于SVC设备的小型化和节能。
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