A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830503

Ming-Chun Hong, Yao-Jen Chang, Y. Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I. Wang, S. Z. Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, S. Sheu, W. Lo, Minn-Tsong Lin, Chih-I Wu, T. Hou

引用次数: 1

Abstract

A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).

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4K-400K宽工作温度范围MRAM技术，超薄复合自由层和镁间隔层

提出了一种通用的MRAM技术，以满足从量子计算到汽车电子在4K至400K宽工作温度范围内的多种应用。设计了一种带有Mg间隔层的超薄(1.4 nm) CoFeB复合自由层，可以提高击穿电压和写入余量，减小开关电流，并在所有温度下保持热稳定性和磁阻比。高耐用性(>1011)和出色的可靠性(写入余量> 0.4 V)在4K到400K范围内实现，而不影响速度(10 ns)和保留(300K下10年)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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