An optimum inductive matched cascode LNA in 60GHz-band

H. Mizutani, E. Taniguchi, M. Tsuru, R. Inagaki, S. Kameda, N. Suematsu, T. Takagi, K. Tsubouchi
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Abstract

This paper presents an optimum interstage matching inductor of a cascode amplifier by formulation, for the first time. The formulation clarifies capacitances of FETs which degrade a gain of the cascode amplifier. The inductive matched cascode LNA fabricated by 90nm CMOS performs 25.6 dB gain with NF of 6 dB and output P1dB of -2.3 dBm at 60GHz while consuming 26.9 mW.
60ghz波段最佳感应匹配级联码LNA
本文首次用公式提出了级联放大器的最佳级间匹配电感。该公式澄清了降低级联放大器增益的场效应管的电容。采用90nm CMOS制作的感应匹配级联码LNA在60GHz时增益为25.6 dB, NF为6 dB,输出P1dB为-2.3 dBm,功耗为26.9 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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