S. Ghedira, Faten Ouaja Rziga, Khaoula Mbarek, K. Besbes
{"title":"Dynamical resistive switching of a generic memristor model: Analysis and simulation","authors":"S. Ghedira, Faten Ouaja Rziga, Khaoula Mbarek, K. Besbes","doi":"10.1109/ICEMIS.2017.8273035","DOIUrl":null,"url":null,"abstract":"The memristors was theorized by Leon O. Chua in 1971 as a passive two-terminal electronic device that changes its resistive state depending on the current or voltage history through the device. Since the first fabrication of the memristor by HP Labs in 2008, it has been extensively studied for wide electronic applications. Thus, many SPICE models have been proposed to describe the behavior of memristor. All these models are focused on the pinched hysteresis loop phenomenon, which takes various shape, depending on their different properties. In this paper, we study the dynamical behavior of memristor. We use a simple and flexible SPICE memristor model to demonstrate that this model accounts for four different types of a memristor: the bipolar memristor behavior, the unipolar memristor behavior, the bipolar with forgetting effect and the reversible process between the bipolar and the unipolar behavior.","PeriodicalId":117908,"journal":{"name":"2017 International Conference on Engineering & MIS (ICEMIS)","volume":"647 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Engineering & MIS (ICEMIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMIS.2017.8273035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The memristors was theorized by Leon O. Chua in 1971 as a passive two-terminal electronic device that changes its resistive state depending on the current or voltage history through the device. Since the first fabrication of the memristor by HP Labs in 2008, it has been extensively studied for wide electronic applications. Thus, many SPICE models have been proposed to describe the behavior of memristor. All these models are focused on the pinched hysteresis loop phenomenon, which takes various shape, depending on their different properties. In this paper, we study the dynamical behavior of memristor. We use a simple and flexible SPICE memristor model to demonstrate that this model accounts for four different types of a memristor: the bipolar memristor behavior, the unipolar memristor behavior, the bipolar with forgetting effect and the reversible process between the bipolar and the unipolar behavior.
1971年,蔡立昂(Leon O. Chua)提出了忆阻器的理论,认为忆阻器是一种无源双端电子器件,可以根据器件的电流或电压历史改变其电阻状态。自2008年惠普实验室首次制造忆阻器以来,它已被广泛研究用于广泛的电子应用。因此,人们提出了许多SPICE模型来描述忆阻器的行为。所有这些模型都关注的是缩滞回线现象,缩滞回线根据其不同的性质呈现出不同的形状。本文研究了忆阻器的动态特性。我们使用一个简单而灵活的SPICE忆阻器模型,证明该模型可以解释四种不同类型的忆阻器:双极忆阻器行为、单极忆阻器行为、带遗忘效应的双极忆阻器以及双极与单极行为之间的可逆过程。