2-D potential model for short channel common double gate MOSFETs adapted to gate-oxide thickness symmetry

Venkata Appa Rao Yempada, S. Jandhyala
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引用次数: 0

Abstract

Existing compact models for double gate FinFETs assume uniform gate-oxide thickness on both the functional sides of the Fins. Any difference in oxide thickness between the sides is accommodated by fit parameters in the compact model. Though such approach is sufficient in saturation regime, a more physical approach is essential to account for short-channel effects and leakage currents at weak and moderate inversions. In this manuscript, we propose a 2-D closed form surface potential model for a more generic device, the common double gate MOSFETs which can physically account for the asymmetry in thickness between the gate-oxides. The model can be used to compute body potential useful in modeling the Short channel effects, up to an oxide thickness asymmetry of 50% and up to channel lengths of 20nm.
适合栅极-氧化物厚度对称的短沟道共双栅极mosfet二维电势模型
现有的双栅极finfet紧凑模型假设在鳍的功能两侧栅极氧化物厚度均匀。两侧之间氧化物厚度的任何差异都由紧凑模型中的拟合参数调节。虽然这种方法在饱和状态下是足够的,但更物理的方法对于解释短通道效应和弱和中等反转时的泄漏电流是必不可少的。在本文中,我们提出了一个二维封闭形式的表面电位模型,用于更通用的器件,常见的双栅极mosfet,它可以物理地解释栅极氧化物之间厚度的不对称性。该模型可用于计算体电位,可用于模拟短通道效应,直至氧化物厚度不对称性为50%,直至通道长度为20nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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